Abstract
Electron energy loss spectroscopy (EELS) is used simultaneously with Auger electron spectroscopy for profiling an anodic Ta 2O 5 layer 30 nm thick on tantalum using 3 keV Ar + ions. Plotted as a function of the sputtering time, the 16 eV EELS peak intensity correlates fairly well with the O(510 eV) Auger peak intensity but shows a different depth resolution at the interface.
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