Abstract
The effects of different thermal processing on the characteristics of zinc oxide (ZnO) thin-film transistors (TFTs) with either gas-permeable or sealed gate-stack were studied and compared. The characteristics of a TFT heat-treated in a nonoxidizing ambience or under a sealed configuration degraded with increasing annealing temperature, though the former offered a comparatively wider process margin. On the other hand, the oxidization of the channel region of a TFT allowed by a gas- permeable gate-stack resulted in significant improvement in the transistor characteristics, e.g., eliminating the hysteresis and increasing the field-effect mobility to a relatively high value of 55 cm 2 /Vs. The difference in behavior is attributed to the annealing-dependent generation and annihilation of defects in ZnO under different coverage configurations, and suggests a general guideline on the thermal processing of ZnO TFTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
