Abstract
In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.
Highlights
The type-I and type-II nano-heterostructures have been very popular in the area of optoelectronics because of their demand in the in the designing of opto-devices such as detectors, lasers, light emitting diodes (LEDs) and other photovoltaic devices due to their proficiency of transport of photogenerated carriers in the heterostructures
Most of the type-I and type-II heterostructures has shown their utility in the visible region and near infrared region (NIR) [1,2,3,4,5,6]; some have been found to play their role in MIR or SWIR as well as in FIR [7]-[11]
SIMULATION RESULTS AND DISCUSSION The basic and very important requirement for the realization of optoelectronic devices such as LEDs and lasing heterostructures is to determine the optical gain because it describes the optical amplification in active region (QW) the semiconductor based quantum wells (QWs) heterostructure
Summary
The type-I and type-II nano-heterostructures have been very popular in the area of optoelectronics because of their demand in the in the designing of opto-devices such as detectors, lasers, LEDs and other photovoltaic devices due to their proficiency of transport of photogenerated carriers in the heterostructures Both of them have their distinguished features in different regime of wavelengths. Tan et al [13] have reported optical gain and spontaneous emission characteristics of low In-content AlInN-delta-GaN quantum wells (QWs) and analyzed the results for deep ultraviolet (UV) light emitting diodes (LEDs) and lasers. In their analysis, they found a large increase in the dominant transverse electric (TE) polarized spontaneous emission rate and optical gain. Of the paper, device structure having type-I and type-II band lineup; detailed theory adopted for gain calculation along with the results have been discussed
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