Abstract
We report the observation of quasibound states in single semiconductorbarriers, in heterostructures with both type-I and type-II band alignments. We discuss the localization and the shape of wave functions of such states, as well as their density of states. In structures with type-II band alignment (CdSe/ZnTe and CdMnSe/ZnTe) we observe transitions involving electrons confined in the conduction band well and quasibound holes localized in the valence band barrier (both in the CdSe layer). In the system with type-I band alignment (ZnMnSe/ZnSe), transition between states quasibond in the single ZnMeSe barrier also show clear absorption peaks
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