Abstract
Both fluorination and oxidation have been employed to passivate defects in indium-gallium–zinc oxide thin-film transistors, leading to enhanced device attributes. It is presently reported that the former is more effective than the latter, requiring shorter process time (hence improved manufacturing efficiency), resulting in reduced initial defect population (hence enhanced scalability), and more robust resistance against process- and stress-induced defect generation (hence improved reliability). It is determined that the fluorine drive-in heat treatment is best conducted in an oxidizing atmosphere.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
