Abstract
Abstract Ba1−x Sr x TiO3 thin film capacitors have been successfully prepared using rf-sputtering and a metal organic deposition (MOD) method. The structure, microstructure and composition of the BSTO films are presented. Films grown on lanthanum aluminate LAO(100) showed c-axis preferred growth orientation. Broad paraelectric-to-ferroelectric transitions were observed in films prepared by both methods. The tunability of the capacitance by means of an appplied electric field is examined using various capacitor geometries. A decrease in the capacitance exceeding 75% at 77 K was obtained from the MOD deposited films under an electric field strength of 0.3 MV/cm. On the other hand, the tunability of the capacitance in the rf-sputtered films ranged from 5 to 10% at 77 K and at 20 kV/cm, while it exceeds 50% in some films. The results are compared with the predictions of Devonshire's phenomenological theory.
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