Abstract
A comparative study of the photoluminescence, reflection, and photoluminescence excitation spectra of MBE- and MOVPE-grown nitrogen-doped ZnSe samples has been carried out. MOVPE-grown samples demonstrate impurity recombination via shallow donor states while MBE-grown samples show mainly recombination via deep donor states, with significantly lower donor concentrations. Thus, the shallow donors are the main cause of compensation in MOVPE-grown samples. In MBE-grown samples, the excitation transfer to impurity states takes place mainly via free excitonic states and acceptor-bound excitons, while in MOVPE-grown ZnSe : N the excitation transfer occurs mainly via donor-bound excitons. A simultaneous presence of a broad 2.6 eV band and a narrower 2.7 eV band was observed in time-integrated spectra of MOVPE-grown ZnSe : N.
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