Abstract

ABSTRACTThree methods recently proposed for enhancing the nucleation density of thin film diamond on non-diamond surfaces during microwave plasma assisted chemical vapor deposition are investigated. The results of a series of nucleation and growth studies utilizing a dc biasing technique, carbon cluster (C70) thin film overlayers, and thin film metal (Fe) overlayers for diamond nucleation enhancement are presented. The influence of the substrate and plasma processing parameters under which the above nucleation enhancement effects occur has been determined for the three respective techniques.

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