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Abstract
Three different methods, viz. (1) vacuum co-evaporation, (2) RF sputtering and (3) electrodeposition, have been applied to deposit thin films of CdTe. The films are cubic 〈111〉 in nature. The grains are found to grow better on textured rather than smooth surfaces. RF sputtered films are stoichiometric, the other two contain excess Te. Annealing reduces the Te content. Substrates and pH of the solution play important roles in determining the stoichiometry of the electrodeposited CdTe films. The carrier concentration, mobility and resistivity of the films are in the range of 10 13–10 14 cm −3, 25–35 cm 2/V·s and 10 3–10 4 Ω cm, respectively.
Published Version
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