Abstract
Traditional dc magnetron sputtering has a low ionization rate when preparing metallic thin films. With the development of thin film science and the market demand for thin film material applications, it is necessary to improve the density of magnetron-sputtered films. High-power pulsed magnetron sputtering (HiPIMS) technology is a physical vapor deposition technology with a high ionization rate and high energy. Therefore, in this work, HiPIMS was applied to prepare metallic tungsten films and compare the surface morphology and microstructure of metallic tungsten films deposited using HiPIMS and dc magnetron sputtering (dcMS) technology under different pulse lengths, as well as related thermal resistance performance, followed by annealing treatment for comparative analysis. We used AFM, SEM, XRD, and plasma characterization testing to comprehensively analyze the changes in the TCR value, stability, repeatability and other related performance of the metallic tungsten thin-film sensor deposited by the HiPIMS technology. It was determined that the thin film prepared by the HiPIMS method is denser, with fewer defects, and the film sensor was stable. The 400 °C annealed sample prepared using HiPIMS with a 100 μs pulse length reaches the largest recorded TCR values of 1.05 × 10−3 K−1. In addition, it shows better stability in repeated tests.
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