A comparative analysis of silicon (Si) and indium phosphide nanostructure based solar cells

Abstract

In this study, we have performed a comparative optical analysis for three different nanostructures such as nanowire, truncated nanocone, and inverted truncated nanocone for both Si and InP in the wavelength range from 300 to 1130 nm and 300–930 nm respectively, where the higher wavelength corresponds to the bandgap of Si and InP respectively. The simulations are performed in the Wave Optics Module of COMSOL Multiphysics. Height and diameter optimization of the proposed Si and InP nanostructures is performed. The results reveal that the truncated nanocone possesses superior anti-reflection properties as compared to inverted truncated nanocone and nanowire. We have also shown the absorptance spectrum for Si and InP-based nanostructures. Highest optical short circuit current density (Jsc) of 32.81 mA/cm2 is achieved with InP truncated nanocone structure with height of 400 nm, base diameter of 125 nm and pitch of 300 nm.