Abstract
In this paper, we present an analytical model for high frequency and microwave noise model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Radio-frequency and noise performances are calculated using an active transmission line method. A comparison is made between classical and quantum charge control and between drift diffusion and hydrodynamic models.
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