A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations

Abstract

Fin-shaped field effect transistors (FinFETs) are considered to be a very attractive option to improve the performance of complementary metal-oxide-semiconductor devices into the sub-50-nm gate length regime. However, for those dimensions, quantum effects must be considered in order to develop accurate compact models useful for circuit simulations. In this paper, we study the influence of the quantum effects on dc, Radio frequency (rf), and microwave noise for nanoscale FinFET transistors including nonstationary effects. We present an analytical charge model to adjust the charge control computed from the self-consistent solution of the two-dimensional Schrödinger and Poisson equations. rf and noise performances are calculated using the active transmission line method. Comparison between classical and quantum charge control and between drift-diffusion and hydrodynamic models is carried out.