Abstract
Carbon nanotube field-effect transistor (CNTFET) shows great potential for digital and analog applications due to the unique 1-D ballistic carrier transport in carbon nanotubes (CNTs). A new compact physical model for CNT Schottky-barrier transistors is proposed in this article. The Schottky barrier between the contact metal and CNTs is described by using an effective barrier height, and more importantly, the influence of using CNT arrays or networks rather than a single CNT as the device channel is considered in this model. Moreover, the trapping effect is investigated and modeled by adding <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RC</i> delay element to the equivalent circuit. The model is proposed in a concise form to avoid complex operations such as integration and is compatible with circuit simulation. The simulation results of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}-{V}$ </tex-math></inline-formula> characteristics are verified to be in agreement with experimental data.
Published Version
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