A Compact Model for Drift and Diffusion Memristor Applied in Neuron Circuits Design

Abstract

A compact model of memristor for unifying two switch characteristics, drift and diffusion, has been proposed. The switching mechanism is based on the ion dynamic transport theory at the oxide interface layer. The model is verified by experimental data in different oxide material-based drift memristors and new emerging diffusion memristors. Under parameter variations and temperature evolution, this model well fits dc/ac characteristics of both devices. Moreover, the compact model is coded in Verilog-A and implemented in a vendor CAD environment. As case studies, the applications of this model in the neuromorphic circuit design to replace the traditional CMOS circuits are shown.