Abstract
This paper presents the development and implementation of a compact diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It can be used in both circuit simulators and the formal optimisation of devices and circuits. A Fourier-based solution is used to solve the ambipolar diffusion equation (ADE) and describe the carrier dynamics. The model is shown to capture the required aspects of high-voltage diode recovery successfully, including the use of local lifetime control to eliminate snappy recovery
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