A CMOS-based large-area high-resolution imaging system for high-energy x-ray applications

Abstract

CCDs have been the primary sensor in imaging systems for x-ray diffraction and imaging applications in recent years. CCDs have met the fundamental requirements of low noise, high-sensitivity, high dynamic range and spatial resolution necessary for these scientific applications. State-of-the-art CMOS image sensor (CIS) technology has experienced dramatic improvements recently and their performance is rivaling or surpassing that of most CCDs. The advancement of CIS technology is at an ever-accelerating pace and is driven by the multi-billion dollar consumer market. There are several advantages of CIS over traditional CCDs and other solid-state imaging devices; they include low power, high-speed operation, system-on-chip integration and lower manufacturing costs. The combination of superior imaging performance and system advantages makes CIS a good candidate for high-sensitivity imaging system development. This paper will describe a 1344 x 1212 CIS imaging system with a 19.5μm pitch optimized for x-ray scattering studies at high-energies. Fundamental metrics of linearity, dynamic range, spatial resolution, conversion gain, sensitivity are estimated. The Detective Quantum Efficiency (DQE) is also estimated. Representative x-ray diffraction images are presented. Diffraction images are compared against a CCD-based imaging system.