A CMOS transimpedance amplifier with broad-band and high gain based on negative Miller capacitance

Abstract

A CMOS transimpedance amplifier (TIA) with broad band and high gain based on negative Miller capacitance and capacitive degeneration has been proposed and designed. The theoretical analysis shows that by introducing negative Miller capacitance into the feedforward common gate (FCG) amplifier circuit, the bandwidth limitation caused by the internal parasitic capacitance can be reduced, and by cascading the capacitive degeneration-based common source (CS) amplifier as the gain stage, the amplifier gain can be improved simultaneously. The proposed TIA is designed and simulated in TSMC 65 nm CMOS process, The simulation results show that the −3 dB bandwidth of the amplifier circuit is 23.7 GHz, the transimpedance gain is 60.1 dBΩ, the average equivalent input noise current spectral density is less than 40.7 pA/√Hz, the power consumption is 4.8 mW, and the circuit layout area is 0.0027 mm2. In Comparison to the published TIA circuits, the bandwidth of the designed CMOS TIA is increased by 12.7 GHz, the gain is increased by 18.1 dBΩ and the circuit layout area becomes smaller. All the results demonstrate that the designed TIA can be used in the photoelectric detection circuit with broader bandwidth and higher gain.