Abstract
A low power CMOS voltage reference using body effect and switched-capacitor technique is presented in this paper. The output voltage is produced by the gate-source voltage. The MOSFETs are working on subthreshold region thus the power consumption is greatly reduced. By utilizing the switchedcapacitor technique, only one transistor is required to generate the reference voltage, so that the threshold voltage mismatch in conventional two-transistor configuration is eliminated. The proposed circuit is designed and simulated under 0.18-㎛ CMOS technology. The output voltage is 117.68 ㎷, and the temperature coefficient is less than 50.0 ppm/℃ ranging from -40 ℃ to 80 ℃. The voltage line-sensitivity is 0.19 %/V ranging from 1.2 V to 3.2 V. The average current consumption is about 95 nA.
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