Abstract
A CMOS-compatible high-voltage IC process is proposed and implemented. An important feature of this process is that the extra processing steps do not affect the performance of the low-voltage devices. High-voltage lateral DMOS transistors with breakdown voltages of 400 V, as well as merged MOS-bipolar devices such as lateral insulated-gate transistors (LIGTs) and insulated-base transistors (IBTs) have been fabricated using this process. The IBTs, which have breakdown voltages of 400 V, high current-handling capabilities, and high switching speeds, offer better performance than the LIGTs. In addition the IBT, because it does not latchup, is a more reliable structure than the LIGT. >
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