A CMOS charge sensitive preamplifier for CdZnTe detector

Abstract

In this work, a low noise and low power charge sensitive preamplifier (CSA) based on CSMC 0.6 µm double poly mix CMOS technology was designed and simulated. In this design, two MOSFETs were used as a feedback resistor and a feedback capacitor respectively to replace an on-chip resistor in parallel and an on-chip capacitor in a conventional CSA. Simulation results show that this design can reduce the noise level of the CSA and the area of the layout. The noise of the CSA can be less than several electrons, which can be calculated from the simulation results, and the power consumption is about 2.2mW/channel. Four channels can be placed in a 0.6×0.6 mm2 chip.