Abstract
Low noise amplifier (LNA) performs as the initial amplification block in the receive path in a radio frequency (RF) receiver. In this work an ultra-wideband 3.1 10.6-GHz LNA is discussed. By using the proposed circuits for RF CMOS LNA and design methodology, the noise from the device is decreased across the ultra wide band (UWB) band. The measured noise figure is 2.66 3 dB over 3.1 10.6-GHz, while the power gain is 14 ± 0.8 dB. It consumes 23.7 mW from a 1.8 V supply. The input and output return losses (S11 & S22) are less than –11 dB over the UWB band. By using the modified derivative superposition method, the third-order intercept point IIP3 is improved noticeably. The complete circuit is based on the 0.18 μm standard RFCMOS technology and simulated with Hspice simulator.
Highlights
Development of the high-speed wireless communication systems puts increasing request on integrated low-cost radio frequency (RF) devices with multi-GHz bandwidth operating at the lowest power consumption and supply voltage
By using the proposed circuits for RF CMOS Low noise amplifier (LNA) and design methodology, the noise from the device is decreased across the ultra wide band (UWB) band
This paper presents a new design of an UWB LNA structure based on a standard RFCMOS technology
Summary
Development of the high-speed wireless communication systems puts increasing request on integrated low-cost RF devices with multi-GHz bandwidth operating at the lowest power consumption and supply voltage. Ultra wide band (IEEE 802.15.3a) appears as a new technology capable for high data transfer rates (up to 1 Gb/s) within short distances (10 m) at low power. This technology uses for some application such as wireless personal area networks (WPANs), providing an environment for transmission of audio, video, and other high-bandwidth data [1]. The main parameter in this research is noise figure which has noticeably improved in comparison with the other references. It is 2.66 - 3 dB over 3.1 - 10.6-GHz band width
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