Abstract
Low noise amplifier (LNA) performs as the initial amplification block in the receive path in a radio frequency (RF) receiver. In this work an ultra-wideband (UWB) 3.1–10.6-GHz LNA is discussed. By using the proposed circuits for RF CMOS LNA and design methodology, the noise from the device is decreased across the ultra-wide band band. The measured noise figure is 2.66 −3 dB over 3.1–10.6-GHz, while the power gain is 14 ± 0.8 dB. It consumes 23.7 mW from a 1.8 V supply. The input and output return losses (S 11 & S 22 ) are less than-1l dB over the UWB band. By using the modified derivative superposition method, the third-order intercept point IIP3 is improved noticeably. The complete circuit is based on the 0.18 μm standard RF CMOS technology and simulated with Hspice simulator.
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