Abstract
Thin films of tin disulphide (SnS2) have been chemically deposited for the first time from an acidic bath, using sodium thiosulphate (Na2S2O3) as a sulphur source, onto glass, tin oxide-coated glass and titanium substrates. Their electrical, optical and photoelectrochemical properties have been studied. The chemically deposited SnS2 films are n-type semiconductors and the optical band gap is 2.35 eV. The room temperature resistivity is of the order of 103-104 Omega cm. As-deposited SnS2 films showed photovoltaic activity.
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