A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

Feilong Liu Feilong Liu,Frank He Frank He,Feng Liu Feng Liu,Lining Zhang Lining Zhang,Jian Zhang Jian Zhang,Mansun Chan

doi:10.1109/edssc.2008.4760654

Feilong Liu Feilong Liu, Frank He Frank He + Show 4 more

https://doi.org/10.1109/edssc.2008.4760654

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Abstract

This paper presents a charge-based compact model for the arbitrary doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poisson’s equation with fixed charge and inversion charge terms, an accurate equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sah’s dual integral, a drain current expression with concise form is derived. Based on the Ward-Dutton’s linear-charge-partition method and the current continuity principle, all trans-capacitances are obtained analytically. The developed model is valid in all operation regions without any smooth function. The model predictions have been extensively verified by 3D numerical simulations with a wide range of geometrical parameters and channel doping concentrations.

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