A charge pump without body effect that generates a positive or negative high voltage

Abstract

We propose a new high-efficiency CMOS charge pump circuit that generates a high positive or negative voltage by using a low operating voltage of 1.5 V. By controlling the body voltage and boosting the gate voltage of the nMOSFET, the back bias effect is removed and the voltage gain per unit stage is not affected by the threshold voltage. The proposed circuit can output a high voltage of 10 V when a 0.18-µm CMOS processing chip that operates at a voltage as low as 1.5 V is used. Furthermore, by replacing the input and output the circuit can generate a high positive or negative voltage. In addition, we demonstrate that a different positive voltage and current are output at the same time by a series connection to this charge pump. © 2005 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 88(3): 19–26, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20097