Abstract
By means of electrical and magnetic investigation of Yb-doped CdTe crystals, the following was established: (1) Additional shallow donors and paramagnetic centers are not introduced into the doping process; the hole conductivity of doped crystals is controlled by A-centers; their ionization energy depends on Yb impurity concentration (C) according to the law E A = (0.15 + 2.4 × 10 −11 C −1 2 ) eV; (2) It is supposed that Yb impurity deforms the lattice so that the components of the complex A-center move away one from another when the concentration ( C) increases; and E A increases accordingly.
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