Abstract
The shallow positive charged acceptor center as well as the exciton bound to a neutral acceptor have been considered in the semiconductors with a degenerate valence band. The multiplet structure of the charged acceptor center has been investigated and the binding energies have been calculated as functions of the light hole to heavy hole effective mass ratio. The dissociation energies of bound exciton — neutral acceptor complex have been calculated in donor — like model.
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