Abstract
Mostly Γ-electrons in direct gap semiconductors with zinc-blend crystal lattice are used for experimental researches of the ballistic transport. Mean free paths of both heavy and light holes in these materials (as well as in the diamond-like semiconductors) are small enough1 because of predominant scattering into heavy-hole states. Situation changes crucially at an uniaxial compression which eliminates the degeneracy of valence bands at the point k=0 and shifts this point along the compression direction. In the energy range δE12(0)=E2(0)-E2(0) (where 1,2 are numbers of the mixed valence bands) there are only light holes with substantially anisotropic dispersion relations E1(k). Thus their mean free path and time increase substantially.
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