A CdSe thin-film field effect transistor

Abstract

A thin-film effect transistor appears to be the most promising for an all thin-field integrated circuit. In this paper the authors have reported a coplanar device incorporating an evaporated CdSe film and an anodically grown aluminium oxide layer. The fabrication is based on optimized deposition conditions. The d.e. characteristics of the device are presented. For the transistor the device parameters are calculated from the I-T characteristics.