Abstract
Low dropout (LDO) voltage regulators are essential for noise-sensitive circuit systems in cryogenic temperature environments. This paper characterized and modeled a full-scale BSIM4-based 180nm MOSFET at cryogenic temperature. Then, a high PSR low output noise cap-less LDO is implemented with the cascade and feed-forward current technology for cryogenic applications. At 77K, simulation results show that PSR is -98dB at 10kHz and -78dB at 100kHz, and the integrated noise is 0.82 µVrms among the frequency from 100Hz to 100kHz.
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