A-C:H Films deposited on crystalline silicon to masking it anisotropic etching by aqueous ethylenediamine solution

Abstract

Amorphous hydrogenated carbon (a-C:H) thin films deposited by r.f. chemical vapor deposition were applied as mask to anisotropic etching of crystalline silicon by aqueous solution of Ethylenediamine with Pyrocatechol (EDP). Films with thicknesses of approximately 100 nm were successfully patterned on silicon slices by the lift-off process. Then the masked samples were submitted to one aqueous EDP solution during time intervals of 8, 16, 24 and 100 min at a temperature of 98°C. The inspection showed well defined etching pattern and absence of etch pits on the surface underneath the film indicating the high chemical resistance of the a-C:H film to the aqueous EDP solution.