Abstract
A physical modeling framework is demonstrated for Negative Bias Temperature Instability (NBTI). It can simulate temporal kinetics of threshold voltage shift (ΔVt) during and after DC and AC stress and mixed DC-AC stress for dynamic voltage, frequency and activity conditions. It can predict gate insulator process dependence and is consistent with large and small area devices. The framework is included in a commercial TCAD software to simulate degradation of FinFETs and GAA NWFETs.
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