Abstract
This letter presents a fully integrated three-stage single-ended D-band power amplifier (PA) designed in 0.13-μm silicon-germanium (SiGe) BiCMOS technology. Several bandwidth extension techniques and matching networks are mutually exploited to maximize Bandwidth (BW) performance while assuring unconditional stability. Its measured 3-dB bandwidth covers the entire D-band (110-170 GHz). The PA has a small-signal peak gain of 21 dB at 151 GHz. Its saturated output power (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> ) in the D-band varies from 11.8 to 13.9 dBm and its output referred 1-dB compression point (OP1 dB) from 9.2 to 12.5 dBm within the D-band. The presented amplifier occupies 0.65 × 0.47 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (including pads) and draws a current of 115 mA from a 3.3-V supply. To the best of our knowledge, these performances represent the state of the art in silicon technology with a minimum (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> ) of 11.8 dBm and (OP1 dB) of 9.2 dBm covering the entire D-band.
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