Abstract
A 5.25 GHz linear power amplifier for Wireless LAN application has been realized in 0.35 mum SiGe BiCMOS technology. This paper presents a two-stage power amplifier operating at AB mode under a single supply of +3.3 v. A current mirror bias circuit is integrated to improve the linearity, efficiency, gain of the power amplifier. The result of simulation shows that the output 1 dB compression point (OP1 dB) is 26.3 dBm, the saturated output power achieves 28.5 dBm, the power added efficiency (PAE) at OP1 dB is about 20%, and the small signal gain is 28.3 dB at 3.3 v supply voltage.
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