Abstract
An analytical model for the breakdown voltage (BV) of a Lateral Double-diffused Metal Oxide Semiconductor field-effect transistor with a Multi-Ring structure (M-R LDMOS) is presented. The proposed analytical model is obtained by solving Poisson’s equation in cylindrical coordinates, which can reasonably explain the modulation effect of the M-R structure on the surface and vertical electric field distributions at the same time, and accurately describe the potential and electric field distributions of the M-R structure. As well as the lateral, vertical and radial BVs are formulized to predict the breakdown behaviors. In the paper, all the analytical results can be validated by numerical results obtained by Sentaurus Technology Computer Aided Design (TCAD) simulation, showing the accuracy of the proposed model. It is worth noting that the proposed analytical model is applicable to lateral power devices with an M-R structure.
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