A Block Classification Method with Monitor and Restriction in NAND Flash memory

Myungsub Lee

doi:10.17762/turcomat.v12i5.877

Abstract

In this paper, we propose a block classification with monitor and restriction (BCMR) method to isolate and reduce the interference of blocks in garbage collection and wear leveling. The proposed method monitors the endurance variation of blocks during garbage collection and detects hot blocks by making a restriction condition based on this information. This method induces block classification by its update frequency for garbage collection and wear leveling, resulting in a prolonged lifespan for NAND flash memory systems. The performance evaluation results show that the BCMR method prolonged the life of NAND flash memory systems by 3.95% and reduced the standard deviation per block by 7.4%, on average.

Highlights

Unlike conventional magnetic disks, NAND flash memory, a type of nonvolatile memory, has advantages such as low power consumption, fast operating speeds, and light weight
Recently considerable research has been conducted on flash translation layers (FTL), a development that can solve these problems without changing the traditional file systems or data structures
Previous researchers have conducted studies on methods to extend the lifespan of NAND flash memory using either garbage collection or wear leveling

Summary

A Block Classification Method with Monitor and Restriction in NAND Flash memory

Article History: Received: 11 January 2021; Accepted: 27 February 2021; Published online: 5 April 2021. Abstract:In this paper, we propose a block classification with monitor and restriction (BCMR) method to isolate and reduce the interference of blocks in garbage collection and wear leveling. The proposed method monitors the endurance variation of blocks during garbage collection and detects hot blocks by making a restriction condition based on this information. This method induces block classification by its update frequency for garbage collection and wear leveling, resulting in a prolonged lifespan for NAND flash memory systems. The performance evaluation results show that the BCMR method prolonged the life of NAND flash memory systems by 3.95% and reduced the standard deviation per block by 7.4%, on average

Introduction

Experiment and Evaluation

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Findings

Conclusions