Abstract
ABSTRACT BaZr x Ti1 − x O3-Ba(Fe0.5Ta0.5)O3-FeTaO4 (BZT-BFT-FT) ceramics were fabricated by a columbite route in an attempt to develop a lead-free inorganic dielectric material suitable for use as an insulating material with high relative permittivity and low dielectric loss for next-generation system-on-package (SOP) applications. The fabricated BZT ceramics with compositions of BaZr x Ti1 − x O3 with x = 0.05–0.30 all had a single-phase perovskite structure. The sample with 20/80 composition (100x/(100−100x) in BaZr x Ti1 − x O3) exhibited the best dielectric properties with an ideal Curie temperature of 30°C, high relative permittivity of 4750, and low dielectric loss of 0.6% at 1 MHz. The addition of BFT as a depressor agent and FT as a sintering aid, at optimal concentrations of y = 0.03 ((1−y)BZT-yBFT) and 0.5 mass% FT, yielded ceramics with ϵr of 3080 and tanδ of 0.05% at 1 MHz. This novel lead-free inorganic dielectric material can therefore be expected to be useful as an inorganic insulating material with high permittivity for SOP applications.
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