Abstract
In this article, a band-switchable low noise amplifier using switching inductors is designed and measured. A voltage supply is fed through the structure of switching inductors. The switching inductors consist of three inductors in series and two PMOSFET switches, which are individually connected in parallel with one of the two inductors near the voltage supply. According to on or off states of two PMOSFET switches, there are four operation modes that generate a single-band, two dual-band, and a triple-band transfer characteristics, respectively. The presented circuit is a modified cascoded amplifier configuration in which input stage is a common-gate structure. The measured gains are nearly >11 dB at all operation frequency bands. The measured reflection coefficients are almost <−10 dB at all operation frequency bands. The noise figures are almost <4.5 dB at all operation frequency bands. The power consumption is 9 mW. The chip size is 1.02 × 1.2 mm2. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:462–467, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25707
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