A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Qiqiao Wu,Ming Liu,Haijun Jiang,Qi Liu,Yue Cao,Hangbing Lv,Chunmeng Dou,Zhongze Han,Yongkang Han,Jianguo Yang,Qing Luo

doi:10.1109/jssc.2023.3320659

A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Qiqiao Wu, Ming Liu + Show 9 more

https://doi.org/10.1109/jssc.2023.3320659

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Journal: IEEE Journal of Solid-State Circuits	Publication Date: Jan 1, 2024
Citations: 3

Affiliation: Institute of Microelectronics, Chinese Academy of Sciences, Fudan University, Shanghai Zhangjiang Laboratory, University of Chinese Academy of Sciences

#Sense Amplifier

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A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier<sup />

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