A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications.

Tahesin Samira Delwar,Manas Ranjan Biswal,Prangyadarsini Behera,Yeji Choi,Abrar Siddique,Jee-Youl Ryu

doi:10.3390/s22020594

Tahesin Samira Delwar, Manas Ranjan Biswal + Show 4 more

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https://doi.org/10.3390/s22020594

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Abstract

A 24 GHz highly-linear upconversion mixer, based on a duplex transconductance path (DTP), is proposed for automotive short-range radar sensor applications using the 65-nm CMOS process. A mixer with an enhanced transconductance stage consisting of a DTP is presented to improve linearity. The main transconductance path (MTP) of the DTP includes a common source (CS) amplifier, while the secondary transconductance path (STP) of the DTP is implemented as an improved cross-quad transconductor (ICQT). Two inductors with a bypass capacitor are connected at the common nodes of the transconductance stage and switching stage of the mixer, which acts as a resonator and helps to improve the gain and isolation of the designed mixer. According to the measured results, at 24 GHz the proposed mixer shows that the linearity of output 1-dB compression point (OP1dB) is 3.9 dBm. And the input 1-dB compression point (IP1dB) is 0.9 dBm. Moreover, a maximum conversion gain (CG) of 2.49 dB and a noise figure (NF) of 3.9 dB is achieved in the designed mixer. When the supply voltage is 1.2 V, the power dissipation of the mixer is 3.24 mW. The mixer chip occupies an area of 0.42 mm.

Highlights

The rapid growth of communication systems, at millimeter-wavelength frequencies, has been received considerable attention
A 24 GHz up-conversion mixer using 65 nm CMOS technology is proposed for automotive short-range radar sensor applications
We proposed a mixer with an enhanced transconductance stage consisting of a duplex transconductance path (DTP) to improve linearity

Summary

Introduction

The rapid growth of communication systems, at millimeter-wavelength (mm-wave) frequencies, has been received considerable attention. It could continually evaluate the environment to help the driver to handle the car efficiently and to prevent collisions [1]. To fulfill this goal, a 24 GHz automotive radar sensor is considered as a leading one, to be employed in smart vehicles. There is further research and development in the development of long-range 77-GHz and short-range 77–81-GHz silicon radars [7,8,9,10,11] These articles include K band with highly integrated silicon ICs [12,13,14,15]. The integrated CMOS circuits working at 100 GHz and beyond [4,5,6] are opening up new options

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