Abstract
This letter proposes a 60 GHz power amplifier (PA) fabricated in GaAs 0.15μm pHEMT process technology.A three-stage topology with Lange couplers is adopted. The measured results show that the proposed PA achieves a gain of 23 dB and a saturated output power of 14.46 dBm at 63.4 GHz, and its peak power-added efficiency is 6.9%. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2150–2153, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27015
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