Abstract
This letter proposes a 60 GHz power amplifier (PA) fabricated in GaAs 0.15μm pHEMT process technology.A three-stage topology with Lange couplers is adopted. The measured results show that the proposed PA achieves a gain of 23 dB and a saturated output power of 14.46 dBm at 63.4 GHz, and its peak power-added efficiency is 6.9%. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2150–2153, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27015
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
