Abstract
Experimental results achieved with planar GaAs transferred electron oscillators at V-band frequencies are reported in this contribution. The active devices are MESFET-like structures with a Schottky-gate controlling the electron injection into the drift region. The electron injection is adjusted to a level yielding a frequency independent negative differential resistance which is exploited for millimeter-wave power generation. The highest measured CW output power and efficiency are 6.72 mW and 1.3% at 60.33 GHz, respectively. These results are comparable to those obtained with transistor oscillators which are much more difficult to fabricate due to their extremely small dimensions in the 0.1 /spl mu/m range. >
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