Abstract

A 6-bit Ku band digital step attenuator with low phase variation is presented in this paper. The attenuator is designed with 0.13-μm SiGe BiCMOS process technology using triple well isolation N-Metal-Oxide-Semiconductor (TWNMOS) and through-silicon-via (TSV). TWNMOS is mainly used to improve the performance of switches and reduce the insertion loss (IL). TSV is utilized to provide approximately ideal global current ground plane with low impedance for the attenuator. In addition, substrate floating technique and new capacitance compensation technique are adopted in the attenuator to improve the linearity and decrease the phase variation. The measured results show that the attenuator IL is 6.99–9.33 dB; the maximum relative attenuation is 31.87–30.31 dB with 0.5-dB step (64 states), the root mean square (RMS) for the amplitude error is 0.58–0.36 dB and the phase error RMS is 2.06–3.46° in the 12–17 GHz frequency range. The total chip area is 1 × 0.9 mm2.

Highlights

  • The attenuator is one of the key components of modern communications. It is widely used in the transmitter/receiver (T/R) module of phased array radar system [1,2], and its main function is to achieve amplitude control

  • Compared with the X-type attenuator [3] and variable gain amplifier (VGA) [4,5], the passive digital step attenuator has the advantages of low power consumption, high linearity, wide frequency band and low temperature drift

  • Due to the relative attenuation signal paths across the transmission lines have no series switches, this topology has the advantage of low insertion loss (IL)

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Summary

Introduction

The attenuator is one of the key components of modern communications. It is widely used in the transmitter/receiver (T/R) module of phased array radar system [1,2], and its main function is to achieve amplitude control. Switched path attenuators topology use single-pole-double-throw (SPDT) switches to control the signal between reference thru line path and the resistive attenuation network path. This topology exhibits low phase variation, but has high insertion loss and large chip area, so it is not suitable for multi-bit CMOS digital step attenuator. Due to the relative attenuation signal paths across the transmission lines have no series switches, this topology has the advantage of low IL. Switched T/Pi attenuators topology is composed by the resistor attenuation network and series shunt single-pole-single-throw (SPST) switches. 6-bit CMOS resolution, large and lowlow phase change, this paperpaper proposed a 6-bitaCMOS digital digital step attenuator using switched.

Proposed
Measurement Results
Comparison with Relevant Digital Control Step Attenuators
Conclusions
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