Abstract

The common self-oscillation-mode (SOM) frequency dividers have a high- $Q$ sensitivity curve limiting the locking range (LR). This letter reports a non-SOM (NSOM) frequency divider-by-2. Fabricated in 65-nm CMOS, it occupies a die area of $6.5\,\,\times 7\,\,\mu \text{m}^{2}$ , and measures a single-band untuned LR of 166.6% (4–44 GHz), over a small input range $ . The key technique is a load-modulated dynamic latch aided by a current-reuse cross-coupled pMOS pair. The achieved figure-of-merit of 26.6 GHz/mW compares favorably with the state-of-the-art.

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