A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process

Abstract

In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (Δ Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (σ/μ) is 0.1%. The charge-pump core area is 0.308 mm2, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications.