A 5 nm nitrided gate oxide for 0.25 /spl mu/m SOI CMOS technologies

Abstract

Hot carrier lifetime, gate oxide integrity, and radiation response of a 5 nm nitrided gate oxide were evaluated for 0.25 /spl mu/m SOI CMOS devices intended for use in 2.5 V applications and high radiation environments. The devices were fabricated in a new SOI substrate called UNIBOND-170. It is found that the DC hot electron lifetime of the devices exceed 10 years at the operating voltage. Good gate oxide integrity and radiation hardening up to 1 Mrad are shown to make this technology promising for radiation-hard ULSI applications.