A 5-MHz, 3.6-mW, 1.4-V SRAM with nonboosted, vertical bipolar bit-line contact memory cell

Abstract

This paper describes a 256-Kbit SRAM fabricated using a novel bipolar bit-line contact memory cell having a large static noise margin. Vertical PNP transistors are introduced at the bit-line contact area, which realizes lower operational voltage and a memory-cell area equivalent to a 4-NMOS-type cell. The minimum operating voltage is 1.4 V without using a boosting technique, and the access time is 60 ns at a V/sub cc/ of 1.8 V and room temperature. The power dissipation is 3.6 mW at a V/sub cc/ of 1.4 V. The operating V/sub cc/ range is 1.4-4.0 V.