Abstract
A monolithic low-noise amplifier for operation in the 5.8 GHz band is described. Different versions have been implemented each operating over a different range of supply voltage. At 5 V, the amplifier's gain is about 16 dB, with a noise figure of 4.1 dB and 1 dB compression point at -15 dBm input power. The circuits have been designed utilizing Ericsson Components 0.6 micron silicon bipolar technology (P71), featuring n-p-n transistors with f/sub T/ and f/sub max/ of about 20 GHz.
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