Abstract
Ultraviolet nanoimprint lithography (UV-NIL) is a promising technology for the fabrication of sub-10-nm features. Research has focused on employing a large-area stamp to improve UV-NIL throughput, but a large-area stamp makes it difficult to obtain an acceptable uniform residual layer thickness and/or avoid defects such as air entrapment. This paper presents the development of a single-step UV-NIL tool in which a 4-in. Pyrex stamp is first used to imprint coated resin against a 4-in. Si wafer in a low vacuum environment. Pressurized N 2 is subsequently applied to the wafer bottom to improve the quality of imprint results. This UV-NIL tool was used to successfully imprint a 4-in. stamp with recessed patterns engraved over the entire stamp areas onto a 4-in. Si wafer.
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